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Semiconductor
FSJ9055D, FSJ9055R
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Harris portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet.
June 1998
Features
* 55A, -60V, rDS(ON) = 0.029 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM * Photo Current - 6.0nA Per-RAD(Si)/s Typically * Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2
Ordering Information
RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV Commercial TXV Space PART NUMBER/BRAND FSJ9055D1 FSJ9055D3 FSJ9055R1 FSJ9055R3 FSJ9055R4
Symbol
D
G
Formerly available as type TA17750.
S
Package
TO-254AA
G S D
CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright
(c) Harris Corporation 1998
File Number
4415.1
3-221
FSJ9055D, FSJ9055R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified FSJ9055D, FSJ9055R -60 -60 55 35 165 20 125 50 1.20 165 55 165 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 60 -2.0 -1.0 VGS = 0V to -20V VGS = 0V to -12V VGS = 0V to -2V VDD = -30V, ID = 55A ID = 55A, VDS = -15V VDS = -25V, VGS = 0V, f = 1MHz TYP 0.020 130 36 42 -6 6300 2250 300 MAX -7.0 -6.0 25 250 100 200 -1.75 0.029 0.044 55 90 80 35 250 160 16 48 53 0.83 40 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
IDSS
VDS = -48V, VGS = 0V VGS = 20V
Gate to Source Leakage Current
IGSS
Drain to Source On-State Voltage Drain to Source On Resistance
VDS(ON) rDS(ON)12
VGS = -12V, ID = 55A ID = 35A, VGS = -12V
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
td(ON) tr td(OFF) tf Qg(TOT) Qg(12) Qg(TH) Qgs Qgd V(PLATEAU) CISS COSS CRSS RJC RJA
VDD = -30V, ID = 55A, RL = 0.55, VGS = -12V, RGS = 2.35
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FSJ9055D, FSJ9055R
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 55A ISD = 55A, dISD/dt = 100A/s MIN -0.6 TYP MAX -1.8 110 UNITS V ns
Electrical Specifications up to 100K RAD
PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300s Max. 2. Absolute value. (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3)
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0V VGS = 0, VDS = -48V VGS = -12V, ID = 55A VGS = -12V, ID = 35A MIN -60 -2.0 MAX -6.0 100 25 -1.75 0.029 UNITS V V nA A V
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) (Note 4)
ENVIRONMENT (NOTE 5) ION SPECIES Ni Br Br Br Br I I I I NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 60 60 60 60 60 TYPICAL RANGE () 43 36 36 36 31 31 31 31 31 APPLIED VGS BIAS (V) 20 10 15 20 0 5 10 15 20 (NOTE 6) MAXIMUM VDS BIAS (V) -60 -60 -48 -36 -60 -48 -36 -24 -12
TEST Single Event Effects Safe Operating Area
SYMBOL SEESOA
Typical Performance Curves
Unless Otherwise Specified
1E-3 LIMITING INDUCTANCE (HENRY)
LET = 26MeV/mg/cm2, RANGE = 43 LET = 37MeV/mg/cm2, RANGE = 36 LET = 60MeV/mg/cm2, RANGE = 31 -70 -60 -50 VDS (V) -40 -30 -20 -10 0 0 TEMP = 25oC 5 10 VGS (V) 15 20 25 FLUENCE = 1E5 IONS/cm2 (TYPICAL)
1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6
1E-7 -10
-30
-100 DRAIN SUPPLY (V)
-300
-1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS
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FSJ9055D, FSJ9055R Typical Performance Curves
70 60 50 ID , DRAIN (A) 40 30 20 10 0 -50 ID , DRAIN CURRENT (A) 100 100s
Unless Otherwise Specified
(Continued)
500
TC = 25oC
1ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 10ms 100ms
0
50
100
150
TC , CASE TEMPERATURE (oC)
10 100 VDS , DRAIN TO SOURCE VOLTAGE (V)
200
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5 PULSE DURATION = 250ms, VGS = -12V, ID = 35A 2.0 QG NORMALIZED rDS(ON) -12V
1.5
QGS VG
QGD
1.0
0.5
CHARGE
0.0 -80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
101 NORMALIZED THERMAL RESPONSE (ZJC)
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-3 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 t1 t2 101
10-2
PDM
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
3-224
FSJ9055D, FSJ9055R Typical Performance Curves
500
Unless Otherwise Specified
(Continued)
IAS , AVALANCHE CURRENT (A)
100
STARTING TJ = 25oC
STARTING TJ = 150oC 10
1 0.1
IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 tAV , TIME IN AVALANCHE (ms) 10
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L + CURRENT I TRANSFORMER AS BVDSS tP IAS + VDS VDD
-
VARY tP TO OBTAIN REQUIRED PEAK IAS 0V tP
50
DUT 50
VDD
50V-150V
VGS 20V
tAV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
VDD
tON td(ON)
tOFF td(OFF) tr tf 90%
RL VDS 0V DUT
VDS
90%
10%
10%
VGS = -12V
90% RGS VGS 10% 50% PULSE WIDTH 50%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
3-225
FSJ9055D, FSJ9055R Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source On Resistance Gate Threshold Voltage NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. SYMBOL IGSS IDSS rDS(ON) VGS(TH) TEST CONDITIONS VGS = 20V VDS = 80% Rated Value TC = 25oC at Rated ID ID = 1.0mA MAX 20 (Note 7) 25 (Note 7) 20% (Note 8) 20% (Note 8) UNITS nA A V
Screening Information
TEST Gate Stress Pind Pre Burn-In Tests (Note 9) JANTXV EQUIVALENT VGS = -30V, t = 250s Optional MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours 10% MIL-S-19500, Group A, Subgroup 2 JANS EQUIVALENT VGS = -30V, t = 250s Required MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours 5% MIL-S-19500, Group A, Subgroups 2 and 3
Steady State Gate Bias (Gate Stress)
Interim Electrical Tests (Note 9)
Steady State Reverse Bias (Drain Stress)
PDA Final Electrical Tests (Note 9)
NOTE: 9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance SYMBOL SOA IAS VSD VSD TEST CONDITIONS VDS = -48V, t = 10ms VGS(PEAK) = -15V, L = 0.1mH tH = 100ms; VH = -25V; IH = 4A tH = 500ms; VH = -25V; IH = 4A MAX 11.0 165 110 190 UNITS A A mV mV
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FSJ9055D, FSJ9055R Rad Hard Data Packages - Harris Power Transistors
TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A E. Group B F. Group C G. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet
2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A E. Group B - Attributes Data Sheet - Group A Lot Traveler - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data
2. Rad Hard Max. "S" Equivalent - Optional Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data
F. Group C
G. Group B
H. Group C
G. Group D
I. Group D
Class S - Equivalents 1. Rad Hard "S" Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report
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FSJ9055D, FSJ9055R TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
A E OP A1
INCHES SYMBOL A MIN 0.249 0.040 0.035 0.790 0.535 MAX 0.260 0.050 0.045 0.800 0.545
MILLIMETERS MIN 6.33 1.02 0.89 20.07 13.59 MAX 6.60 1.27 1.14 20.32 13.84 NOTES 2, 3 4 4 4 -
Q H1
A1 Ob D
D
E e e1 H1 J1
0.065 R MAX. TYP.
0.150 TYP 0.300 BSC 0.245 0.140 0.520 0.139 0.110 0.265 0.160 0.560 0.149 0.130
3.81 TYP 7.62 BSC 6.23 3.56 13.21 3.54 2.80 6.73 4.06 14.22 3.78 3.30
L OP Q
L
Ob
1
2
3 J1
e e1
NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC outline TO-254AA dated 11-86. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its' compounds.
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